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| savantic semiconductor product specification silicon npn power transistors MJE12007 description with to-220 package high voltage low saturation voltage applications suited for line-operated switchmode applications such as: fluorescent lamp ballasts inverters solenoid and relay drivers motor controls deflection circuits pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(t c =25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 750 v v ebo emitter-base voltage open collector 9 v i c collector current (dc) 2.5 a i cm collector current-peak 5 a p d total power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.56 /w downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors MJE12007 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =50ma; i b =0 750 v v ce (sat) -1 collector-emitter saturation voltage i c =1a ;i b =0.5a 1.0 v v ce (sat) -2 collector-emitter saturation voltage i c =2a ;i b =1a 2.5 v v be (sat) -1 base-emitter saturation voltage i c =1a ;i b =0.5a 1.5 v v be ( sat) -2 base-emitter saturation voltage i c =2a ;i b =1a 2.8 v i cev collector cut-off current v cev =ratedvalue ; v be(off) =-1.5v t c =100 0.25 2.5 ma i ebo emitter cut-off current v eb =9v; i c =0 0.25 ma h fe-1 dc current gain i c =1a ; v ce =5v 3 h fe-2 dc current gain i c =2a ; v ce =5v 2.5 downloaded from: http:/// savantic semiconductor product specification 3 silicon npn power transistors MJE12007 package outline fig.2 outline dimensions (unindicated tolerance:0.10mm) downloaded from: http:/// |
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